PART |
Description |
Maker |
EIA1718-2P |
17.7-18.7GHz, Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
MGFC36V7177A |
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC39V7177A |
7.1 - 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段8瓦特内部匹配砷化镓场效应
|
Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
|
RFPA1702PCBA-410 RFPA1702S2 RFPA1702SB RFPA1702SQ |
17.7GHz TO 19.7GHz HIGH LINEARITY POWER AMPLIFIER
|
RF Micro Devices
|
LTC5508 LTC5508ESC6 LTC5508ESC6TRM LTC5508ESC6TRMP |
300MHz to 7GHz RF Power Detector with Buffered Output in SC70 Package; Package: SC70; No of Pins: 6; Temperature Range: -40°C to 125°C 300 MHz - 7000 MHz RF/MICROWAVE LINEAR DETECTOR, 12 dBm INPUT POWER-MAX 300MHz to 7GHz RF Power Detector in SC70
|
Linear Technology, Corp.
|
MC1471 MC1471C MC1741CDR2 MC1741CP1 MC1741CD MC174 |
Internally Compensated, High Performance Operational Amplifier From old datasheet system Internally Compensated / High Performance Operational Amplifier Internally Compensated, High Performance Operational Amplifier OP-AMP, 1 MHz BAND WIDTH, PDIP8
|
ONSEMI[ON Semiconductor]
|
BTA16-600BW3G BTA16-800BW3G BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA I-GT, 16 A I-T(RMS) Triacs Silicon Bidirectional Thyristors 600V 16 A, 50mA Igt 3 Quadrant Internally Isolated Triac
|
ON Semiconductor
|
SZM-2066Z |
2.4-2.7GHz 2W Power Amplifier
|
http:// Sirenza Microdevices, Inc
|
RFPA2226SQ RFPA2226-EVB1 RFPA2226-EVB2 |
2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
|
RF Micro Devices
|
SZA2044ZPCK-EVB2 SZA2044ZSQ |
700MHz to 2.7GHz 5V 1W Power Amplifier
|
RF Micro Devices
|
LT550409 LT5504-15 |
800MHz to 2.7GHz RF Measuring Receiver
|
Linear Technology
|